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US Patent 11784056 Self-aligned double patterning

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
August 9, 2022
Date of Patent
October 10, 2023
Patent Application Number
17883930
Patent Citations
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US Patent 8822243 Light emitting devices having light coupling layers with recessed electrodes
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US Patent 8987142 Multi-patterning method and device formed by the method
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US Patent 9053279 Pattern modification with a preferred position function
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US Patent 9093530 Fin structure of FinFET
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US Patent 9099530 Methods of patterning small via pitch dimensions
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US Patent 9153478 Spacer etching process for integrated circuit design
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US Patent 9455194 Method for fabricating semiconductor device
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US Patent 9501601 Layout optimization of a main pattern and a cut pattern
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US Patent 9748110 Method and system for selective spacer etch for multi-patterning schemes
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US Patent 9548303 FinFET devices with unique fin shape and the fabrication thereof
•••
Patent Inventor Names
Kuan-Wei Huang
Jyu-Horng Shieh
Yu-Yu Chen
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11784056
Patent Primary Examiner
‌
Robert G Bachner
CPC Code
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H01L 21/76898
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H01L 21/0337
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H01L 21/76811
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H01L 21/76816
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H01L 2221/101
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H01L 21/0338
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H01L 21/31144
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H01L 21/3081
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H01L 21/3086
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H01L 21/32139
•••

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