US Patent 11822251 Photoresist with polar-acid-labile-group
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US Patent 11822251 Photoresist with polar-acid-labile-group
Article
Patent abstract
Methods and materials for making a semiconductor device are described. The method includes forming a photoresist over a substrate. The photoresist includes an acid-labile group (ALG) connected to a polar unit. The method also includes exposing the photoresist to a radiation beam, baking the photoresist and performing a developing process to the photoresist.
Infobox
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Patent Jurisdiction
Patent Number
Patent Inventor Names
An-Ren Zi0
Ching-Yu Chang0
Date of Patent
November 21, 2023
0Patent Application Number
150198360
Date Filed
February 9, 2016
0Patent Citations
Patent Primary Examiner
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