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US Patent 11822251 Photoresist with polar-acid-labile-group
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Patent
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Date Filed
February 9, 2016
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Date of Patent
November 21, 2023
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Patent Application Number
15019836
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Patent Citations
US Patent 8741551 Method and composition of a dual sensitive resist
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US Patent 8658344 Patterning process and photoresist with a photodegradable base
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US Patent 8715919 Surface switchable photoresist
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US Patent 8034547 Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
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US Patent 8216767 Patterning process and chemical amplified photoresist with a photodegradable base
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US Patent 8323870 Method and photoresist with zipper mechanism
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US Patent 8580117 System and method for replacing resist filter to reduce resist filter-induced wafer defects
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Patent Inventor Names
Ching-Yu Chang
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An-Ren Zi
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11822251
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Patent Primary Examiner
John S. Chu
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CPC Code
G03F 7/325
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G03F 7/038
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G03F 7/38
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G03F 7/0392
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G03F 7/40
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G03F 7/0382
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G03F 7/0397
0
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