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US Patent 11854688 Semiconductor device and method

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
May 29, 2020
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Date of Patent
December 26, 2023
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Patent Application Number
16888264
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Patent Citations
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US Patent 9209247 Self-aligned wrapped-around structure
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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
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US Patent 9343370 Method for fabricating semiconductor device
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US Patent 9412817 Silicide regions in vertical gate all around (VGAA) devices and methods of forming same
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US Patent 9412828 Aligned gate-all-around structure
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US Patent 9460968 Fin shape for fin field-effect transistors and method of forming
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US Patent 9472618 Nanowire field effect transistor device having a replacement gate
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US Patent 9502265 Vertical gate all around (VGAA) transistors and methods of forming the same
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US Patent 9520482 Method of cutting metal gate
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US Patent 9536738 Vertical gate all around (VGAA) devices and methods of manufacturing the same
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•••
Patent Inventor Names
Yen-Ming Chen
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Wei-Yang Lee
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Feng-Cheng Yang
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Feng-Ching Chu
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11854688
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Patent Primary Examiner
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Mary A Wilczewski
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CPC Code
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H01L 29/66795
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H01L 21/845
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H01L 21/823418
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H01L 21/823431
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H01L 21/823462
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H01L 21/823481
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H01L 21/823807
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H01L 21/823814
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H01L 21/823821
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H01L 21/823828
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•••

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