US Patent 11862467 Semiconductor structure and method of manufacturing the same
Patent 11862467 was granted and assigned to Taiwan Semiconductor Manufacturing Company on January, 2024 by the United States Patent and Trademark Office.
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US Patent 11862467 Semiconductor structure and method of manufacturing the same
Article
Patent abstract
A method of manufacturing a semiconductor structure, comprising providing a substrate; forming a fin structure over the substrate; depositing an insulation material over the fin structure; performing a plurality of ion implantation cycles in-situ with implantation energy increased or decreased stepwise; and removing at least a portion of the insulation material to expose a portion of the fin structure.
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Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chi-Feng Huang0
Chia-Chung Chen0
Chung-Hao Chu0
Victor Chiang Liang0
Date of Patent
January 2, 2024
0Patent Application Number
178396820
Date Filed
June 14, 2022
0Patent Citations
0
Patent Primary Examiner
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