US Patent 11894237 Ultra narrow trench patterning with dry plasma etching
Patent 11894237 was granted and assigned to Taiwan Semiconductor Manufacturing Company on February, 2024 by the United States Patent and Trademark Office.
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US Patent 11894237 Ultra narrow trench patterning with dry plasma etching
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Patent abstract
A method includes forming a polymer layer on a patterned photo resist. The polymer layer extends into an opening in the patterned photo resist. The polymer layer is etched to expose the patterned photo resist. The polymer layer and a top Bottom Anti-Reflective Coating (BARC) are etched to pattern the top BARC, in which the patterned photo resist is used as an etching mask. The top BARC is used as an etching mask to etching an underlying layer.
Infobox
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Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chao-Hsuan Chen0
Yuan-Sheng Huang0
Date of Patent
February 6, 2024
0Patent Application Number
178265280
Date Filed
May 27, 2022
0Patent Citations
Patent Primary Examiner
CPC Code
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