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US Patent 11971657 Photoresist developer and method of developing photoresist

Patent 11971657 was granted and assigned to Taiwan Semiconductor Manufacturing Company on April, 2024 by the United States Patent and Trademark Office.

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Patent attributes

Patent Applicant

Taiwan Semiconductor Manufacturing Company

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Current Assignee

Taiwan Semiconductor Manufacturing Company

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Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Ching-Yu Chang0

Chin-Hsiang Lin0

Yahru Cheng0

An-Ren Zi0

Date of Patent

April 30, 2024

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Patent Application Number

177179840

Date Filed

April 11, 2022

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Patent Citations

US Patent 9213234 Photosensitive material and method of lithography

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US Patent 9223220 Photo resist baking in lithography process

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US Patent 9256133 Apparatus and method for developing process

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US Patent 9536759 Baking apparatus and method

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US Patent 9548303 FinFET devices with unique fin shape and the fabrication thereof

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US Patent 9857684 Silicon-containing photoresist for lithography

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US Patent 9859206 Photoactive compound gradient photoresist

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US Patent 9875892 Method of forming a photoresist layer

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Patent Primary Examiner

Daborah Chacko-Davis

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CPC Code

0

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Patent abstract

A photoresist developer includes a solvent having Hansen solubility parameters of 15<δ

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