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US Patent 11988965 Underlayer for photoresist adhesion and dose reduction

Patent 11988965 was granted and assigned to Lam Research on May, 2024 by the United States Patent and Trademark Office.

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Patent Citations Received
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US Patent 12105422 Photoresist development with halide chemistries
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Edits on 23 May, 2024
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 US Patent 11988965 Underlayer for photoresist adhesion and dose reduction

Article

Patent abstract

This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

Infobox
Is a
Patent
Patent
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Patent Applicant
Lam Research
Lam Research
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Current Assignee
Lam Research
Lam Research
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
119889650
Patent Inventor Names
Da Li0
Jengyi Yu0
Jun Xue0
Mary Anne Manumpil0
Samantha S. H. Tan0
Date of Patent
May 21, 2024
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Patent Application Number
174523650
Date Filed
October 26, 2021
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Patent Citations
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US Patent 7169440 Method for removing photoresist and etch residues
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US Patent 7223526 Method of depositing an amorphous carbon layer
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US Patent 7307695 Method and device for alignment of a substrate
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US Patent 7335462 Method of depositing an amorphous carbon layer
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US Patent 7608367 Vitreous carbon mask substrate for X-ray lithography
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US Patent 8383316 Resists for lithography
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US Patent 8465903 Radiation patternable CVD film
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US Patent 8536068 Atomic layer deposition of photoresist materials and hard mask precursors
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US Patent 8552334 Adjustable gap capacitively coupled RF plasma reactor including lateral bellows and non-contact particle seal
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US Patent 8664124 Method for etching organic hardmasks
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US Patent 8664513 Solar modules with enhanced efficiencies via use of spectral concentrators
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US Patent 8703386 Metal peroxo compounds with organic co-ligands for electron beam, deep UV and extreme UV photoresist applications
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US Patent 8808561 Inert-dominant pulsing in plasma processing systems
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US Patent 8883028 Mixed mode pulsing etching in plasma processing systems
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US Patent 8883405 Method for forming pattern
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US Patent 9023731 Carbon deposition-etch-ash gap fill process
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US Patent 11209729 Vacuum-integrated hardmask processes and apparatus
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US Patent 9261784 Lithographic patterning process and resists to use therein
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US Patent 9281207 Solution processible hardmasks for high resolution lithography
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US Patent 9310684 Organometallic solution based high resolution patterning compositions
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US Patent 9551924 Structure and method for fixing phase effects on EUV mask
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US Patent 9576811 Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
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US Patent 9632411 Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
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US Patent 9719169 System and apparatus for flowable deposition in semiconductor fabrication
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US Patent 9778561 Vacuum-integrated hardmask processes and apparatus
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US Patent 9823564 Patterned inorganic layers, radiation based patterning compositions and corresponding methods
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US Patent 9829805 Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
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US Patent 9996004 EUV photopatterning of vapor-deposited metal oxide-containing hardmasks
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US Patent 10025179 Organometallic solution based high resolution patterning compositions
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US Patent 10228618 Organotin oxide hydroxide patterning compositions, precursors, and patterning
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US Patent 10416554 Organometallic solution based high resolution patterning compositions
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US Patent 10514598 Vacuum-integrated hardmask processes and apparatus
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US Patent 10566212 Designer atomic layer etching
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US Patent 10580585 Two-step deposition process
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US Patent 10627719 Methods of reducing metal residue in edge bead region from metal-containing resists
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US Patent 10642153 Organometallic solution based high resolution patterning compositions and corresponding methods
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US Patent 10649328 Pre-patterned lithography templates, processes based on radiation patterning using the templates and processes to form the templates
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US Patent 10732505 Organotin oxide hydroxide patterning compositions, precursors, and patterning
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US Patent 10763083 High energy atomic layer etching
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US Patent 10775696 Organotin oxide hydroxide patterning compositions, precursors, and patterning
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US Patent 10782610 Radiation based patterning methods
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US Patent 10787466 Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods
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US Patent 10796912 Eliminating yield impact of stochastics in lithography
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US Patent 10831096 Vacuum-integrated hardmask processes and apparatus
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US Patent 11257674 Eliminating yield impact of stochastics in lithography
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US Patent 11314168 Underlayer for photoresist adhesion and dose reduction
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US Patent 6841341 Method of depositing an amorphous carbon layer
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US Patent 6841943 Plasma processor with electrode simultaneously responsive to plural frequencies
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Patent Primary Examiner
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Caleen O Sullivan
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CPC Code
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H01L 21/0332
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H01L 21/0274
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H01L 21/02274
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G03F 7/70033
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G03F 7/094
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C23C 16/047
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