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US Patent 12062669 SLT integrated circuit capacitor structure and methods

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
May 8, 2023
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Date of Patent
August 13, 2024
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Patent Application Number
18313826
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Patent Citations
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US Patent 8552487 SOI trench DRAM structure with backside strap
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US Patent 8883605 Decoupling composite capacitor in a semiconductor wafer
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US Patent 9312369 Bipolar transistor structure and a method of manufacturing a bipolar transistor structure
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US Patent 9385083 Wafer-level die to package and die to die interconnects suspended over integrated heat sinks
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US Patent 9530798 High performance heat shields with reduced capacitance
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US Patent 9755029 Switch device performance improvement through multisided biased shielding
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US Patent 9780210 Backside semiconductor growth
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US Patent 9837412 S-contact for SOI
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US Patent 9960098 Systems and methods for thermal conduction using S-contacts
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US Patent 10573674 SLT integrated circuit capacitor structure and methods
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•••
Patent Inventor Names
Alain Duvallet
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Abhijeet Paul
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Hiroshi Yamada
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12062669
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Patent Primary Examiner
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Thao P. Le
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CPC Code
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H01L 21/84
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H01L 27/1207
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H01L 21/76251
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H01L 27/13
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