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US Patent 12074025 Photoresist developer and method of developing photoresist

Patent 12074025 was granted and assigned to Taiwan Semiconductor Manufacturing Company on August, 2024 by the United States Patent and Trademark Office.

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Patent abstract

A method of forming a pattern in a photoresist includes forming a photoresist layer over a substrate, and selectively exposing the photoresist layer to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer composition to the selectively exposed photoresist layer to form a pattern. The developer composition includes a first solvent having Hansen solubility parameters of 15<δ

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