US Patent 12074025 Photoresist developer and method of developing photoresist
Patent 12074025 was granted and assigned to Taiwan Semiconductor Manufacturing Company on August, 2024 by the United States Patent and Trademark Office.
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US Patent 12074025 Photoresist developer and method of developing photoresist
Article
Patent abstract
A method of forming a pattern in a photoresist includes forming a photoresist layer over a substrate, and selectively exposing the photoresist layer to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer composition to the selectively exposed photoresist layer to form a pattern. The developer composition includes a first solvent having Hansen solubility parameters of 15<δ
Infobox
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Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
An-Ren Zi0
Chen-Yu Liu0
Ching-Yu Chang0
Ming-Hui Weng0
Date of Patent
August 27, 2024
0Patent Application Number
181976400
Date Filed
May 15, 2023
0Patent Citations
Patent Primary Examiner
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