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US Patent 12080713 Self-aligned etch in semiconductor devices

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
July 25, 2023
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Date of Patent
September 3, 2024
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Patent Application Number
18358140
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Patent Citations
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US Patent 9412817 Silicide regions in vertical gate all around (VGAA) devices and methods of forming same
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US Patent 9412828 Aligned gate-all-around structure
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US Patent 9472618 Nanowire field effect transistor device having a replacement gate
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US Patent 9502265 Vertical gate all around (VGAA) transistors and methods of forming the same
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US Patent 9520482 Method of cutting metal gate
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US Patent 9536738 Vertical gate all around (VGAA) devices and methods of manufacturing the same
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 9608116 FINFETs with wrap-around silicide and method forming the same
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US Patent 9923094 Source/drain regions for fin field effect transistors and methods of forming same
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US Patent 10872820 Integrated circuit structures
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•••
Patent Inventor Names
Ching-Wei Tsai
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Yi-Hsun Chiu
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Yu-Xuan Huang
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Shang-Wen Chang
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Cheng-Chi Chuang
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12080713
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Patent Primary Examiner
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Changhyun Yi
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CPC Code
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H01L 29/7851
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H01L 29/785
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H01L 21/76897
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H01L 29/78696
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H01L 29/42392
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H01L 29/41791
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H01L 23/535
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H01L 21/7682
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H01L 27/0886
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H01L 29/78618
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•••

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