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US Patent 10186420 Formation of silicon-containing thin films
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Patent
Date Filed
October 18, 2017
Date of Patent
January 22, 2019
Patent Application Number
15787342
Patent Citations Received
US Patent 11446699 Vapor phase deposition of organic films
US Patent 11501966 Selective layer formation using deposition and removing
US Patent 11430656 Deposition of oxide thin films
US Patent 11830732 Selective passivation and selective deposition
0
US Patent 11501965 Plasma enhanced deposition processes for controlled formation of metal oxide thin films
US Patent 11230766 Substrate processing apparatus and method
US Patent 11232963 Substrate processing apparatus and method
US Patent 11233133 NbMC layers
US Patent 11525184 Dual selective deposition
US Patent 10559458 Method of forming oxynitride film
•••
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
10186420
Patent Primary Examiner
William Coleman
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