US Patent 10186420 Formation of silicon-containing thin films

Methods for depositing silicon-containing thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including one or more deposition cycles including contacting the substrate with a silicon precursor and a second reactant that does not include oxygen. In some embodiments the methods a deposition cycle can also including contacting the substrate with a carbon precursor.