US Patent 11748540 Method and structure for mandrel and spacer patterning
Patent 11748540 was granted and assigned to Taiwan Semiconductor Manufacturing Company on September, 2023 by the United States Patent and Trademark Office.
All edits
Edits on 7 Sep, 2023
Golden AI
Edits made to:
Infobox (+32 properties)
Article (+487 characters)
US Patent 11748540 Method and structure for mandrel and spacer patterning
Article
A method includes forming a first mandrel pattern and a second mandrel pattern. The first mandrel pattern includes at least first and second mandrels for a mandrel-spacer double patterning process. The second mandrel pattern includes at least a third mandrel inserted between the first and second mandrels. The first mandrel pattern and the second mandrel pattern include a same material. The first and second mandrels are merged together with the third mandrel to form a single pattern.
Infobox
Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
11748540
Patent Inventor Names
Chi-Kang Chang
Chih-Hsiung Peng
Chung-Ming Wang
Kuei-Shun Chen
Shih-Chi Fu
Date of Patent
September 5, 2023
Patent Application Number
17229736
Date Filed
April 13, 2021
Patent Citations
Patent Primary Examiner
Find more entities like US Patent 11748540 Method and structure for mandrel and spacer patterning
Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
