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US Patent 11916132 Semiconductor device and method of manufacture
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Patent
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Date Filed
June 30, 2022
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Date of Patent
February 27, 2024
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Patent Application Number
17854599
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Patent Citations
US Patent 9502265 Vertical gate all around (VGAA) transistors and methods of forming the same
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US Patent 9520482 Method of cutting metal gate
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US Patent 9536738 Vertical gate all around (VGAA) devices and methods of manufacturing the same
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 9608116 FINFETs with wrap-around silicide and method forming the same
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US Patent 9842914 Nanosheet FET with wrap-around inner spacer
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US Patent 9947769 Multiple-layer spacers for field-effect transistors
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US Patent 10319863 Semiconductor device having a varying thickness nanowire channel and method for fabricating the same
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US Patent 10522616 Semiconductor device
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US Patent 11437492 Semiconductor device and method of manufacture
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•••
Patent Inventor Names
Yung-Cheng Lu
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Hung Cheng Lin
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Che-Hao Chang
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Chi On Chui
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Wan-Yi Kao
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11916132
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Patent Primary Examiner
Tong-Ho Kim
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CPC Code
B82Y 10/00
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H01L 29/66553
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H01L 21/02167
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H01L 21/02211
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H01L 21/0228
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H01L 21/02603
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H01L 29/0673
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H01L 29/42392
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H01L 29/4983
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H01L 29/66742
0
•••
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