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US Patent 10340125 Pulsed remote plasma method and system
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Patent
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Date Filed
September 22, 2016
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Date of Patent
July 2, 2019
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Patent Application Number
15273488
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Patent Citations
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US Patent 10083836 Formation of boron-doped titanium metal films with high work function
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US Patent 10032628 Source/drain performance through conformal solid state doping
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US Patent 10023960 Process gas management for an inductively-coupled plasma deposition reactor
Patent Citations Received
US Patent D913980 Gas supply plate for semiconductor manufacturing apparatus
US Patent 11289326 Method for reforming amorphous carbon polymer film
US Patent D947913 Susceptor shaft
US Patent 11295980 Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US Patent 11296189 Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US Patent 10559458 Method of forming oxynitride film
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US Patent 10561975 Variable conductance gas distribution apparatus and method
US Patent D876504 Exhaust flow control ring for semiconductor deposition apparatus
US Patent 10590535 Chemical treatment, deposition and/or infiltration apparatus and method for using the same
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US Patent 10600673 Magnetic susceptor to baseplate seal
•••
Patent Inventor Names
Jereld Lee Winkler
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
10340125
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Patent Primary Examiner
Allan W. Olsen
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