US Patent 11916151 Semiconductor structure having fin with all around gate
Patent 11916151 was granted and assigned to Taiwan Semiconductor Manufacturing Company on February, 2024 by the United States Patent and Trademark Office.
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US Patent 11916151 Semiconductor structure having fin with all around gate
Present disclosure provides a semiconductor structure, including a semiconductor fin having a first portion and a second portion over the first portion, a first conductive region abutting a first lateral surface of the first portion and a first lateral surface of the second portion, a metal gate having a bottom portion and an upper portion, the bottom portion being between the first portion and the second portion of the semiconductor fin, and the upper portion being over the second portion of the semiconductor fin, and a first spacer between the bottom portion of the metal gate and the first conductive region. A method for manufacturing the semiconductor structure described herein is also provided.
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