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US Patent 11274369 Thin film deposition method

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Patent Citations Received
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US Patent 11758641 Power supply system for improving plasma uniformity and method thereof
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=1127436900
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Infobox
Is a
Patent
Patent
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
112743690
Date of Patent
March 15, 2022
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Patent Application Number
165654600
Date Filed
September 9, 2019
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=112743690
Patent Citations
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US Patent 10014212 Selective deposition of metallic films
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US Patent 10017856 Flowable gapfill using solvents
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US Patent 10018920 Lithography patterning with a gas phase resist
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US Patent 10023960 Process gas management for an inductively-coupled plasma deposition reactor
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US Patent 10032628 Source/drain performance through conformal solid state doping
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US Patent 10032792 Semiconductor device and manufacturing method thereof
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US Patent 10043661 Method for protecting layer by forming hydrocarbon-based extremely thin film
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US Patent 10047435 Dual selective deposition
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US Patent 10053774 Reactor system for sublimation of pre-clean byproducts and method thereof
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US Patent 10060473 Energy conversion systems and methods
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US Patent 10083836 Formation of boron-doped titanium metal films with high work function
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US Patent 10087522 Deposition of metal borides
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US Patent 10087525 Variable gap hard stop design
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US Patent 10090316 3D stacked multilayer semiconductor memory using doped select transistor channel
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US Patent 10103040 Apparatus and method for manufacturing a semiconductor device
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US Patent 10106892 Thermal oxide equivalent low temperature ALD oxide for dual purpose gate oxide and method for producing the same
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US Patent 10121671 Methods of depositing metal films using metal oxyhalide precursors
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US Patent 10134617 Wafer carrier having thermal cover for chemical vapor deposition systems
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US Patent 10134757 Method of processing a substrate and a device manufactured by using the method
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US Patent 10147600 Methods for forming doped silicon oxide thin films
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US Patent 10167557 Gas distribution system, reactor including the system, and methods of using the same
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US Patent 10177024 High temperature substrate pedestal module and components thereof
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US Patent 10177025 Method and apparatus for filling a gap
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US Patent 10179947 Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition
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US Patent 10186420 Formation of silicon-containing thin films
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US Patent 10190213 Deposition of metal borides
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US Patent 10190214 Deposition apparatus and deposition system having the same
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US Patent 10190701 Corrosion control for chamber components
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US Patent 10192734 Short inorganic trisilylamine-based polysilazanes for thin film deposition
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US Patent 10193429 Air gap control systems and methods
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US Patent 10204788 Method of forming high dielectric constant dielectric layer by atomic layer deposition
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US Patent 10211308 NbMC layers
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US Patent 10229833 Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
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US Patent 10229851 Self-forming barrier for use in air gap formation
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US Patent 10229985 Vertical field-effect transistor with uniform bottom spacer
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US Patent 10236177 Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
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US Patent 10249524 Cassette holder assembly for a substrate cassette and holding member for use in such assembly
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US Patent 10249577 Method of forming metal interconnection and method of fabricating semiconductor apparatus using the method
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US Patent 10262859 Process for forming a film on a substrate using multi-port injection assemblies
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US Patent 10269558 Method of forming a structure on a substrate
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US Patent 10312055 Method of depositing film by PEALD using negative bias
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US Patent 10312129 Variable adjustment for precise matching of multiple chamber cavity housings
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US Patent 10287684 Substrate processing apparatus
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US Patent 10290508 Method for forming vertical spacers for spacer-defined patterning
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US Patent 10319588 Method for depositing a metal chalcogenide on a substrate by cyclical deposition
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US Patent 10283353 Method of reforming insulating film deposited on substrate with recess pattern
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US Patent 10297440 Method of manufacturing semiconductor device
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US Patent 10276355 Multi-zone reactor, system including the reactor, and method of using the same
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US Patent 10322384 Counter flow mixer for process chamber
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US Patent 10332747 Selective titanium nitride deposition using oxides of lanthanum masks
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US Patent 10332963 Uniformity tuning of variable-height features formed in trenches
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US Patent 10340125 Pulsed remote plasma method and system
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US Patent 10340135 Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
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US Patent 10343920 Aligned carbon nanotubes
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US Patent 10347547 Suppressing interfacial reactions by varying the wafer temperature throughout deposition
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US Patent 10354873 Organic mandrel protection process
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US Patent 10361201 Semiconductor structure and device formed using selective epitaxial process
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US Patent 10361366 Resistive random accress memory containing a conformal titanium aluminum carbide film and method of making
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US Patent 10367080 Method of forming a germanium oxynitride film
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US Patent 10388513 Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
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US Patent 10395917 Si precursors for deposition of SiN at low temperatures
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US Patent 10395919 Method and apparatus for filling a gap
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US Patent 10395963 Electrostatic chuck
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US Patent 10400335 Dual-direction chemical delivery system for ALD/CVD chambers
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US Patent 10410943 Method for passivating a surface of a semiconductor and related systems
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US Patent 10424476 Formation of SiOCN thin films
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US Patent 10424477 Si precursors for deposition of SiN at low temperatures
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US Patent 10428419 Combination CVD/ALD method, source and pulse profile modification
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US Patent 10435790 Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
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US Patent 10468244 Precursors and flowable CVD methods for making low-K films to fill surface features
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US Patent 10468251 Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
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US Patent 10483154 Front-end-of-line device structure and method of forming such a front-end-of-line device structure
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US Patent 10510529 Formation of SiOCN thin films
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US Patent 10510871 Semiconductor device and method
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US Patent 10529554 Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
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US Patent 10590531 Substrate processing apparatus, and method of manufacturing semiconductor device
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US Patent 10590535 Chemical treatment, deposition and/or infiltration apparatus and method for using the same
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US Patent 10600637 Formation of SiOC thin films
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US Patent 10622196 Plasma processing apparatus
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US Patent 10622236 Apparatus and method for handling wafer carrier doors
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US Patent 10648788 Substrate distance monitoring
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US Patent 10662525 Thin film deposition apparatus
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US Patent 10704143 Oxide film forming method
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US Patent 10714335 Method of depositing thin film and method of manufacturing semiconductor device
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US Patent 10731249 Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
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US Patent 10734497 Methods for forming a semiconductor device structure and related semiconductor device structures
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US Patent 10741386 Deposition of SiN
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US Patent 10763139 Vacuum transfer module and substrate processing apparatus
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US Patent 10770336 Substrate lift mechanism and reactor including same
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US Patent 10950477 Ceramic heater and esc with enhanced wafer edge performance
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US Patent 11018003 Method of selective silicon germanium epitaxy at low temperatures
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US Patent 11053584 System and method for supplying a precursor for an atomic layer deposition (ALD) process
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Patent Citations Received
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US Patent 11610764 Plasma source and method of operating the same
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Patent Primary Examiner
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Katherine A. Bareford
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CPC Code
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H01J 37/32724
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H01J 37/32568
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H01J 37/32174
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H01L 21/0228
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H01L 21/02274
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H01J 2237/3321
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C23C 16/4586
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C23C 16/45536
0
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edited on 12 Apr, 2023
Edits made to:
Infobox (+1 properties)
Infobox
Patent Citations Received
‌
US Patent 11610764 Plasma source and method of operating the same
0
Edits on 8 Apr, 2023
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edited on 8 Apr, 2023

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