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Felisa Hiteshew
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Edits on 14 Dec, 2021
"Remove inverse infobox"
Golden AI
edited on 14 Dec, 2021
Edits made to:
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Patent primary examiner of
US Patent 7087111 Method of forming a refractory metal silicide
US Patent 7090724 Langasite single crystal ingot, substrate for piezoelectric device and method for manufacture thereof, and surface acoustic wave device
US Patent 7094288 Method for producing a positively doped semiconductor with large forbidden band
US Patent 7105050 Method for the production of low defect density silicon
US Patent 7105051 High quality colloidal nanocrystals and methods of preparing the same in non-coordinating solvents
US Patent 7105053 Energy efficient method for growing polycrystalline silicon
US Patent 7108745 Formation method for semiconductor layer
US Patent 7118625 Liquid phase growth method for silicon crystal, manufacturing method for solar cell and liquid phase growth apparatus for silicon crystal
US Patent 7118627 Synthesis of colloidal PbS nanocrystals with size tunable NIR emission
US Patent 7125804 Etching methods and apparatus and substrate assemblies produced therewith
US Patent 7128784 Small particle-adjustment crystallization process
US Patent 7132015 Materials for dental and biomedical application
US Patent 7135074 Method for manufacturing silicon carbide single crystal from dislocation control seed crystal
US Patent 7138013 Ceramic film and method of manufacturing the same, semiconductor device, and piezoelectric device
US Patent RE39413 Low friction polish-stop stratum for endpointing chemical-mechanical planarization processing of semiconductor wafers
US Patent 7141114 Process for producing a crystalline silicon ingot
US Patent 7141115 Method of producing silicon-germanium-on-insulator material using unstrained Ge-containing source layers
US Patent 7141116 Method for manufacturing a silicon structure
US Patent 7141117 Method of fixing seed crystal and method of manufacturing single crystal using the same
US Patent 7141499 Apparatus and method for growth of a thin film
US Patent 7144457 Methods and devices for analyzing crystalline content of precipitates and crystals without isolation
US Patent 7147715 Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen
US Patent 7153361 Production method of opto-electronic device array
US Patent 7153363 Atomic layer deposition
US Patent 7153449 Acidic treatment liquid and method of treating copper surfaces
US Patent 7156916 Monolithic integrated crystal-structure-processed mechanical, and combined mechanical and electrical devices, and methods and systems for making
US Patent 7160808 Chuck for supporting wafers with a fluid
US Patent 7166163 Optical member, method of manufacturing the same, and projection exposure system
US Patent 7169227 Method for making free-standing AIGaN wafer, wafer produced thereby, and associated methods and devices using the wafer
US Patent 7172654 Preparation of compounds based on phase equilibria of Cu-In-Se
US Patent 7175706 Process of producing multicrystalline silicon substrate and solar cell
US Patent 7175708 Recovering purified water and potassium chloride from spent basic hydrogen peroxide
US Patent 7179331 Crystal growing equipment
US Patent 7182809 Nitrogen-doped silicon substantially free of oxidation induced stacking faults
US Patent 7192480 Ion exchange waveguides and methods of fabrication
US Patent 7192481 Radiation detector
US Patent 7192482 Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
US Patent 7195668 Crucible for the growth of silicon single crystal and process for the growth thereof
US Patent 7195669 Method of producing silicon monocrystal
US Patent 7195671 Thermal shield
US Patent 7198670 Method of fabricating board having periodically poled region
US Patent 7198673 Optical lithography fluoride crystal annealing furnace
US Patent 7201799 System and method for classifying, detecting, and counting micropipes
US Patent 7201800 Process for making silicon wafers with stabilized oxygen precipitate nucleation centers
US Patent 7201801 Heater for manufacturing a crystal
US Patent 7204881 Silicon wafer for epitaxial growth, an epitaxial wafer, and a method for producing it
US Patent 7208042 Method of manufacturing silicon single crystal and silicon single crystal manufactured by the method
US Patent 7211141 Method for producing a wafer
US Patent 7214266 Methods of crystal optimization
US Patent 7214268 Method of producing P-doped silicon single crystal and P-doped N-type silicon single crystal wafer
US Patent 7214269 Si-doped GaAs single crystal substrate
US Patent 7214270 Crystallization apparatus, crystallization method, device and phase modulation element
US Patent 7214412 Magenta toner and method for producing same
US Patent 7217320 Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
US Patent 7217324 Method and device for producing an electronic GaAs detector for x-ray detection for imaging
US Patent 7220310 Nanoscale junction arrays and methods for making same
US Patent 7220315 Method of producing polycrystalline thin film and method of producing an oxide superconducting element
US Patent 7223303 Silicon cleaning method for semiconductor materials and polycrystalline silicon chunk
US Patent 7223304 Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field
US Patent 7223306 Laser apparatus, laser irradiation method, and manufacturing method of semiconductor device
US Patent 7226505 Method for vanishing defects in single crystal silicon and single crystal silicon
US Patent 7226506 Single crystal silicon producing method, single crystal silicon wafer producing method, seed crystal for producing single crystal silicon, single crystal silicon ingot, and single crystal silicon wafer
US Patent 7226507 Method for producing single crystal and single crystal
US Patent 7226508 Quartz glass crucible and method for the production thereof
US Patent 7226571 High resistivity silicon wafer and method for fabricating the same
US Patent 7229494 Production method for compound semiconductor single crystal
US Patent 7229495 Silicon wafer and method for producing silicon single crystal
US Patent 7229496 Process for producing silicon single crystal layer and silicon single crystal layer
US Patent 7229497 Method of preparing nanocrystals
US Patent 7229499 Manufacturing method for semiconductor device, semiconductor device and semiconductor wafer
US Patent 7229500 Methods and devices for high throughput crystallization
US Patent 7229501 Silicon epitaxial wafer and process for manufacturing the same
US Patent 7232484 Method and apparatus for doping semiconductors
US Patent 7232489 Crucible or related object holder and method of manufacture
US Patent 7232555 AIGaInN single-crystal wafer
US Patent 7235128 Process for producing single-crystal semiconductor and apparatus for producing single-crystal semiconductor
US Patent 7235130 Apparatus and method for diamond production
US Patent 7235131 Method for forming a single crystalline film
US Patent 7238232 Growth of textured gallium nitride thin films on polycrystalline substrates
US Patent 7244306 Method for measuring point defect distribution of silicon single crystal ingot
US Patent 7244308 Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device
US Patent 7244309 Apparatus for pulling single crystal by CZ method
US Patent 7250081 Methods for repair of single crystal superalloys by laser welding and products thereof
US Patent 7250144 Perchlorate removal from sodium chlorate process
US Patent 7255746 Nitrogen sources for molecular beam epitaxy
US Patent 7258739 Process for producing epitaxial silicon wafer and silicon wafer produced by process thereof
US Patent 7261773 Melting crucible
US Patent 7270706 Roll crusher to produce high purity polycrystalline silicon chips
US Patent 7270708 Susceptor, vapor phase growth apparatus, epitaxial wafer manufacturing apparatus, epitaxial wafer manufacturing method, and epitaxial wafer
US Patent 7276117 Method of forming semi-insulating silicon carbide single crystal
US Patent 7276216 Protein crystallography prescreen kit
US Patent 7276219 Preparation of 157nm transmitting barium fluoride crystals with permeable graphite
US Patent 7279040 Method and apparatus for zinc oxide single crystal boule growth
US Patent 7282095 Silicon single crystal pulling method
US Patent 7282190 Silicon layer production method and solar cell production method
US Patent 7285168 Method and apparatus for the measurement, orientation and fixation of at least one single crystal
US Patent 7288150 Homogeneous incorporation of activator element in a storage phosphor
US Patent 7288153 Method of fabricating orientation film for crystal display device
US Patent 7291218 Method of fabricating orientation film for liquid crystal display device
US Patent 7291220 Process of producing silicon wafer
US Patent 7291224 Covering assembly for crucible used for evaporation of raw materials
US Patent 7291225 Heat shield and crystal growth equipment
US Patent 7294196 Silicon single crystal wafer, an epitaxial wafer and a method for producing a silicon single crystal
US Patent 7294203 Heat shielding member of silicon single crystal pulling system
US Patent 7294324 Low basal plane dislocation bulk grown SiC wafers
US Patent 7299658 Quartz glass crucible for the pulling up of silicon single crystal
US Patent 7300517 Manufacturing method of hydrogen-doped silicon single crystal
US Patent 7300518 Apparatus and method for producing single crystal, and silicon single crystal
US Patent 7300519 Reduction of subsurface damage in the production of bulk SiC crystals
US Patent 7303627 Method for making low-stress large-volume not-(111)-oriented crystals with reduced stress birefringence and more uniform refractive index and crystals made thereby
US Patent 7303629 Apparatus for pulling single crystal
US Patent 7306676 Apparatus for manufacturing semiconductor single crystal
US Patent 7309393 High resistivity aluminum antimonide radiation detector
US Patent 7311772 Apparatus and method for supplying raw material in Czochralski method
US Patent 7311775 Method for heat-treating silicon wafer and silicon wafer
US Patent 7311778 Single scan irradiation for crystallization of thin films
US Patent 7311888 Annealed wafer and method for manufacturing the same
US Patent 7311977 Highly-oriented diamond film, method for manufacturing the same, and electronic device having highly-oriented diamond film
US Patent 7314515 Apparatus for fabrication of GaN bulk single crystal and fabrication method of GaN single crystal ingot using the same
US Patent 7314517 Process for obtaining bulk mono-crystalline gallium-containing nitride
US Patent 7314518 Furnace for growing compound semiconductor single crystal and method of growing the same by using the furnace
US Patent 7314520 Low 1c screw dislocation 3 inch silicon carbide wafer
US Patent 7314521 Low micropipe 100 mm silicon carbide wafer
US Patent 7314522 Apparatus and method for producing single crystal
US Patent 7314523 Manufacturing equipment of SiC single crystal and method for manufacturing SiC single crystal
US Patent 7316747 Seeded single crystal silicon carbide growth and resulting crystals
US Patent 7318865 Crystallization apparatus and method; manufacturing method of electronic device, electronic device, and optical modulation element
US Patent 7318916 Semiconductive GaAs wafer and method of making the same
US Patent 7320731 Process for growing silicon single crystal and process for producing silicon wafer
US Patent 7323047 Method for manufacturing granular silicon crystal
US Patent 7323048 Method for producing a single crystal and a single crystal
US Patent 7323050 Method of producing lithium tantalate crystal
US Patent 7326292 Quality evaluation method for single crystal ingot
US Patent 7326295 Fabrication method for polycrystalline silicon thin film and apparatus using the same
US Patent 7326297 Device for the production of crystal rods having a defined cross-section and column-shaped polycrystallization structure by means of floating-zone continuous crystallization
US Patent 7326395 Method for producing a single crystal and silicon single crystal wafer
US Patent 7329318 Methods of crystal precipitation
US Patent 7332027 Method for manufacturing aluminum nitride single crystal
US Patent 7332028 Method for manipulating a rare earth chloride or bromide or iodide in a crucible comprising carbon
US Patent 7332029 Crystal forming apparatus and method for using same
US Patent 7335256 Silicon single crystal, and process for producing it
US Patent 7335257 Apparatus for and method of manufacturing a single crystal rod
US Patent 7335260 Laser annealing apparatus
US Patent 7335262 Apparatus for obtaining a bulk single crystal using supercritical ammonia
US Patent 7344594 Melter assembly and method for charging a crystal forming apparatus with molten source material
US Patent 7344597 Vapor-phase growth apparatus
US Patent 7344689 Silicon wafer for IGBT and method for producing same
US Patent 7357839 SOI wafer and a method of producing the same
US Patent 7361217 Method for crystallising a melamine melt
US Patent 7361219 Method for producing silicon wafer and silicon wafer
US Patent 7361223 Method and apparatus for eliminating a display defect in a liquid crystal display device
US Patent 7364617 Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
US Patent 7364618 Silicon wafer, method for manufacturing the same and method for growing silicon single crystals
US Patent 7364619 Process for obtaining of bulk monocrystalline gallium-containing nitride
US Patent 7368011 Apparatus for manufacturing silicon single crystal, method for manufacturing silicon single crystal, and silicon single crystal
US Patent 7368015 Apparatus for producing single crystal and quasi-single crystal, and associated method
US Patent 7371282 Solid solution wide bandgap semiconductor materials
US Patent 7371283 Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby
US Patent 7374817 Topological crystal of transition metal chalcogenide and method of forming the same
US Patent 7377977 High-purity crystal growth
US Patent 7383696 Silica glass crucible with bubble-free and reduced bubble growth wall
US Patent 7396408 Monocrystalline diamond layer and method for the production thereof
US Patent 7404856 Nitrogen-doped silicon substantially free of oxidation induced stacking faults
US Patent 7413605 Method for manufacturing silicon single crystal
US Patent 7413606 Method for producing crystal of fluoride
US Patent 7413608 Crystallization apparatus, crystallization method, and phase shifter
US Patent 7416603 High quality single crystal and method of growing the same
US Patent 7416709 Method for performing crystallization trials
US Patent 7416710 Method and system for performing crystallization trials
US Patent 7427327 Silica glass crucible with barium-doped inner wall
Edits on 1 Dec, 2021
Golden AI
edited on 1 Dec, 2021
Edits made to:
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+1
properties)
Infobox
Patent primary examiner of
US Patent 7427327 Silica glass crucible with barium-doped inner wall
Golden AI
edited on 1 Dec, 2021
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+1
properties)
Infobox
Patent primary examiner of
US Patent 7416709 Method for performing crystallization trials
Golden AI
edited on 1 Dec, 2021
Edits made to:
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+1
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Infobox
Patent primary examiner of
US Patent 7416710 Method and system for performing crystallization trials
Golden AI
edited on 1 Dec, 2021
Edits made to:
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+1
properties)
Infobox
Patent primary examiner of
US Patent 7416603 High quality single crystal and method of growing the same
Golden AI
edited on 1 Dec, 2021
Edits made to:
Infobox
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+1
properties)
Infobox
Patent primary examiner of
US Patent 7413608 Crystallization apparatus, crystallization method, and phase shifter
Golden AI
edited on 1 Dec, 2021
Edits made to:
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+1
properties)
Infobox
Patent primary examiner of
US Patent 7413605 Method for manufacturing silicon single crystal
Golden AI
edited on 1 Dec, 2021
Edits made to:
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+1
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Infobox
Patent primary examiner of
US Patent 7413606 Method for producing crystal of fluoride
Golden AI
edited on 30 Nov, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patent primary examiner of
US Patent 7404856 Nitrogen-doped silicon substantially free of oxidation induced stacking faults
Edits on 30 Nov, 2021
Golden AI
edited on 30 Nov, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patent primary examiner of
US Patent 7396408 Monocrystalline diamond layer and method for the production thereof
Golden AI
edited on 30 Nov, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patent primary examiner of
US Patent 7383696 Silica glass crucible with bubble-free and reduced bubble growth wall
Golden AI
edited on 29 Nov, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patent primary examiner of
US Patent 7377977 High-purity crystal growth
Golden AI
edited on 29 Nov, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patent primary examiner of
US Patent 7374817 Topological crystal of transition metal chalcogenide and method of forming the same
Edits on 26 Nov, 2021
Golden AI
edited on 26 Nov, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patent primary examiner of
US Patent 7371283 Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby
Golden AI
edited on 26 Nov, 2021
Edits made to:
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+1
properties)
Infobox
Patent primary examiner of
US Patent 7371282 Solid solution wide bandgap semiconductor materials
Golden AI
edited on 26 Nov, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patent primary examiner of
US Patent 7368015 Apparatus for producing single crystal and quasi-single crystal, and associated method
Golden AI
edited on 26 Nov, 2021
Edits made to:
Infobox
(
+1
properties)
Infobox
Patent primary examiner of
US Patent 7368011 Apparatus for manufacturing silicon single crystal, method for manufacturing silicon single crystal, and silicon single crystal
Golden AI
edited on 26 Nov, 2021
Edits made to:
Infobox
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+1
properties)
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Patent primary examiner of
US Patent 7364618 Silicon wafer, method for manufacturing the same and method for growing silicon single crystals
Golden AI
edited on 26 Nov, 2021
Edits made to:
Infobox
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+1
properties)
Infobox
Patent primary examiner of
US Patent 7364619 Process for obtaining of bulk monocrystalline gallium-containing nitride
Golden AI
edited on 26 Nov, 2021
Edits made to:
Infobox
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+1
properties)
Infobox
Patent primary examiner of
US Patent 7364617 Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
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